8682l Ic Datasheet !exclusive! [2026]
Note: If you have a different manufacturer's 8682L (e.g., a memory IC, driver, or custom ASIC), please provide the brand. This review assumes the common BL8682L or similar 82L series LDO.
Component List
| Component | Value | Notes |
|-----------|------------------|------------------------------------------|
| C1 | 10µF (0603/0805) | Input bypass ceramic (X5R or X7R) |
| C2 | 10µF | Output to battery (low ESR) |
| R1 | 2kΩ ±1% | Sets 500mA charge current |
| R2, R3 | 1kΩ | LED current limiting |
| D1 (red) | 3mm/0805 LED | On when charging |
| D2 (green)| 3mm/0805 LED | On when charge complete | 8682l ic datasheet
Practical Application Circuit
A typical application from the datasheet requires minimal external components: Note: If you have a different manufacturer's 8682L (e
- Input capacitor: 10µF ceramic or tantalum (placed close to the IN pin)
- Output capacitor: 22µF minimum (ESR between 0.1Ω and 5Ω for stability)
- Adjustable version: Two resistors (R1, R2) set Vout = 1.25V × (1 + R1/R2)
Stability note: Unlike some modern LDOs, the 8682L requires output capacitors with controlled ESR. Ultra-low ESR ceramic caps alone may cause oscillations; adding a 0.5Ω resistor in series is a common fix. Component List | Component | Value | Notes
Example 2: Solar-Powered Sensor Node
With a 5V solar panel (or 6V panel with LDO regulation to 5V), the 8682L can charge a 18650 cell at 100mA:
- I_CHG = 100mA → R_PROG = 10kΩ
- Add a Schottky diode at input to prevent reverse current from battery to panel at night
PCB layout best practices
- Place the IC close to the antenna feed and keep RF traces minimal.
- Use a solid ground plane under the RF area; stitch with vias around RF ground openings.
- Place decoupling capacitors within 1–2 mm of the power pins.
- Route high-speed digital lines away from antenna and RF traces.
- Follow manufacturer reference layout for component placement and trace widths.
Architectural Highlights
The 8682L employs a PNP pass transistor rather than a PMOS. This classic bipolar design offers inherent protection against reverse input voltages but comes with a higher quiescent current than modern CMOS LDOs. The internal block diagram reveals:
- High-gain error amplifier – maintains output accuracy across load steps.
- Bandgap reference – temperature-compensated (50ppm/°C typical).
- Current limit and thermal sense – foldback current limiting prevents latch-up during faults.
Typical application circuit
- VCC decoupling: 100 nF + 10 µF close to VDD pin.
- RF matching: 2–3 component LC network between ANT and RF pin per reference layout.
- SPI interface: series 33–100 ohm resistors on SCLK/MOSI/MISO if long traces.
- Reset and IRQ: pull-ups/pull-downs per datasheet; short traces to host MCU.
- Power sequencing: if using external regulator, ensure VREG_EN timing follows recommended startup.